Growth of the GaN and GaN/AlGaN on bulk crystals using plasma-assisted molecular beam epitaxy

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TypePresentation
ConferenceXXXII International School on the Physics of Semiconducting Compounds "Jaszowiec 2003", May 30 - June 6, 2003, Jaszowiec, Poland, 37773
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Plant Biotechnology Institute
Noteposter, abstract only; not published in Proceedings of the XXXII International School on the Physics of Semiconducting Compounds (Acta physica polonica. A, v.103 n.6 and v.104 n.2)
Peer reviewedNo
NPARC number12346579
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Record identifier2d543beb-c4d7-4f89-a5f7-973302d683de
Record created2009-09-17
Record modified2016-05-09
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