Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

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DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2007.04.002
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TypeArticle
Journal titleJournal of Crystal Growth
Volume305
Issue2
Pages346354; # of pages: 9
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12743777
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Record identifier2df6560d-0b68-4402-b550-92e0290a145b
Record created2009-10-27
Record modified2016-05-09
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