AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy

Download
  1. Get@NRC: AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1143/APEX.5.022104
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleApplied Physics Express
ISSN1882-0778
Volume5
Issue2
Article number22104
SubjectContinuous wave lasing; Differential gain; GaN substrate; Laser structures; Optical modes; Optical output power; Plasma-assisted molecular beam epitaxy; Room temperature; Threading dislocation densities; Threshold currents; Gallium nitride; Molecular beam epitaxy; Epitaxial growth
AbstractRoom-temperature continuous wave lasing at 432nm with a threshold current of 7.6 kA/cm2 for nitride-based laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy is reported. The diodes were grown on c-plane GaN substrates with a threading dislocation density of 5 × 107 cm -2. We used a simplified laser structure design with GaN claddings where the optical modes were confined by the thick 120nm In 0:08Ga 0:92N waveguide. Our LDs show a high optical output power of 130mW, a differential gain of 0.5 W/A, and a lifetime of 50 h. © 2012 The Japan Society of Applied Physics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21269434
Export citationExport as RIS
Report a correctionReport a correction
Record identifier2e73a629-fc64-498d-a24e-266215d4256e
Record created2013-12-12
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)