Thickness dependence of the properties and thermal stability of PtSi films

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DOIResolve DOI: http://doi.org/10.1016/0040-6090(94)90368-9
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TypeArticle
Journal titleThin Solid Films
Volume253
Issue1-2
Pages467472; # of pages: 6
SubjectElectron microscopy; Reflection spectroscopy; Silicides; X-ray diffraction
AbstractThe phase growth sequence, structural, electrical and optical properties and thermal stability of platinum silicide films were investigated as a function of silicide film thickness in the range 133-2506 ?. The platinum silicide films were formed by ex situ silicidation of Pt films sputter-deposited onto n--Si (100) substrates. Films of all thickness were polycrystalline but exhibited columnar growth morphology and strong orientation effects. The orientation, grain size, electrical resistivity, specular reflectance and thermal stability were observed to be strongly thickness dependent. The temperature at which the film properties degraded increased with film thickness. The degradation mechanism appeared to be Pt diffusion into Si accompanied by the disintegration of the PtSi layer and the formation of an additional Pt3Si phase.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338195
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Record identifier2f0fb4ab-e7b4-41be-a548-a96b122a7eb5
Record created2009-09-10
Record modified2016-05-09
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