Transport properties of gated sub-micron mesas incorporating InAs self-assembled dots that conduct near zero bias

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DOIResolve DOI: http://doi.org/10.1016/j.physe.2004.08.085
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TypeArticle
Journal titlePhysica E: Low-dimensional Systems and Nanostructures
Volume26
Issue1-4
Pages482485; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744187
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Record identifier2f6ad93e-a10e-4b30-9b97-68430c8081e9
Record created2009-10-27
Record modified2016-05-09
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