Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica

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DOIResolve DOI: http://doi.org/10.1063/1.2189115
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TypeArticle
Journal titleApplied physics letters
ISSN0003-6951
Volume88
IssueMarch 20, 12
Pages121920
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; NRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
Identifier10100234
NRC number1326
NPARC number5765205
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Record identifier2fc3ab02-5c9c-4d7d-bc0f-33bea36e9f6b
Record created2009-03-29
Record modified2016-05-09
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