Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing

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DOIResolve DOI: http://doi.org/10.1016/j.sse.2004.05.033
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TypeArticle
Proceedings titleSolid-State Electronics
ConferenceInternational Semiconductor Device Research Symposium 2003 (ISDRS '03), 10-12 December 2003, Washington, D.C., USA
ISSN0038-1101
Volume48
IssueOctober-November
Pages19011906; # of pages: 6
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; National Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NRC number784
NPARC number8899116
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Record identifier2ffbd289-4f54-421c-939c-dfbcba30b8d5
Record created2009-04-22
Record modified2016-05-09
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