Anisotropic roughness in Ge/Si superlattices

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DOIResolve DOI: http://doi.org/10.1063/1.114158
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TypeArticle
Journal titleApplied Physics Letters
Volume66
Issue1
Pages9698; # of pages: 3
SubjectGERMANIUM; HETEROSTRUCTURES; INTERFACE STRUCTURE; MOLECULAR BEAM EPITAXY; ROUGHNESS; SILICON; STRESS RELAXATION; SUPERLATTICES; SYNCHROTRON RADIATION; X - RAY DIFFRACTION
AbstractWe discuss measurements of buried interfaces utilizing x-ray specular reflectivity profiles, and high-resolution x-ray reflectivity measurement of diffuse scattering. Interface structure is compared to atomic force microscopy characterization of the morphology of the Si cap layer overlying the buried structures. The results show that the morphology of roughness on the growth surface is greatly influenced by substrate miscut, and tends to form one-dimensional undulations. Roughness along the miscut direction is highly replicated from interface to interface, but roughness perpendicular to the miscut evolves more rapidly during the growth process. This effect is characterized by a reduced vertical correlation length in x-ray diffuse scattering in one azimuthal orientation.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12337916
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Record identifier30ca14bf-d5ac-41be-832d-8a1b7d109d61
Record created2009-09-10
Record modified2016-05-09
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