Sulphur diffusion at the Si/GaAs(110) interface

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DOIResolve DOI: http://doi.org/10.1063/1.363393
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TypeArticle
Journal titleJournal Of Applied Physics
Volume80
Issue8
Pages43544357; # of pages: 4
SubjectDEPTH PROFILES; DIFFUSION; GALLIUM ARSENIDES; IMPURITIES; INTERFACES; PHOTOEMISSION; RBS; SILICON; SULFUR; X-RAY ABSORPTION ANALYSIS
AbstractThe depth distribution of sulphur near the Si/GaAs(110) interface has been measured using particle induced x-ray emission (PIXE) in conjunction with Rutherford backscattering spectrometry (RBS); ozone oxidation and a hydrofluoric acid step-etching technique were used for sequential removal of Si/GaAs atomic layers. The depth resolution was also calibrated via 16O(d,p)17O nuclear reaction analysis and x-ray photoemission spectroscopy. PIXE/RBS measurements found a half monolayer of sulphur on the H2Sx passivated GaAs(110) surface. Upon deposition of 15 � silicon on the S-passivated GaAs(110), the total amount of sulphur remained constant as compared to that before Si deposition. However, no orientated S�Ga bonds were detected via the x-ray absorption measurement and the depth profile revealed that the sulphur atoms diffused into both the GaAs substrate and the Si heterolayer.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Ocean Technology; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338353
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Record identifier318ed558-e4ae-4502-ad0a-18fa028e44c7
Record created2009-09-10
Record modified2016-05-09
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