Photovoltaic infrared detection with p-type graded barrier heterostructures

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DOIResolve DOI: http://doi.org/10.1063/1.4704695
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TypeArticle
Journal titleJournal of Applied Physics
ISSN00218979
Volume111
Issue8
Article number084505
AbstractPhotovoltaicinfrared detectors have significant advantages over photoconductive detectors due to zero bias operation, requiring low power and having reduced low frequency noise. They also exhibit no thermally assisted tunneling currents, leading to higher operating temperatures. p-type emitter/graded barrier GaAs/AlxGa1−xAs structures were tested as photovoltaicdetectors in the infrared region, operating under uncooled conditions and without an applied bias voltage. A photovoltaic responsivity of 450 mV/W was obtained with a detectivity (D*) of 1.2 × 10^6 Jones at a peak wavelength 1.8 μm at 300 K. Responsivity and D* increased to ∼1.2 V/W and 2.8 × 10^6 Jones, respectively, at 280 K. A non-linear improvement in responsivity was observed with increased emitter thickness.
Publication date
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21269044
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Record identifier3190e9e1-000c-4c73-b0dc-cfb2b52b88c6
Record created2013-12-03
Record modified2016-05-09
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