Photoluminescence studies of Si (100) doped with low-energy (1000 eV) As+ ions during molecular beam epitaxy

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DOIResolve DOI: http://doi.org/10.1063/1.102303
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TypeArticle
Journal titleApplied physics letters
ISSN0003-6951
Volume55
IssueOctober 9, 15
Pages15251527; # of pages: 3
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards
Peer reviewedNo
Identifier10100234
NRC number1131
NPARC number8898518
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Record identifier328762bc-f7b0-4867-b518-ba623d27cf5e
Record created2009-04-22
Record modified2016-05-09
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