Novel SiO2/AlN/HfAlO/IrO2 Memory with Fast Erase, Large ÄVth, Fast Erase and Good Retention

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TypeArticle
ConferenceSymposium on VLSI Technology, 2005
Pages210211; # of pages: 2
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12346663
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Record identifier329ce583-33f4-42f9-8a7d-d1413d861a08
Record created2009-09-17
Record modified2016-05-09
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