Photoluminescence of boron-doped Si[1-x]Ge[x] epilayers grown by UHV-CVD

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DOIResolve DOI: http://doi.org/10.1016/S0921-5107(01)00820-0
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TypeArticle
Journal titleMaterials science and engineering. B
ISSN0921-5107
Volume89
IssueFebruary 14,
Pages141145; # of pages: 5
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; National Research Council Canada
Peer reviewedNo
Identifier10442881
NRC number372
NPARC number5764055
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Record identifier334b6a4f-51d2-46fe-b218-2d5044b019e4
Record created2009-03-29
Record modified2016-05-09
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