High-mobility solution-processed zinc oxide thin films on silicon nitride

Download
  1. Get@NRC: High-mobility solution-processed zinc oxide thin films on silicon nitride (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1002/pssr.201409155
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titlePhysica Status Solidi - Rapid Research Letters
ISSN1862-6254
AbstractA high effective electron mobility of 33 cm2 V-1 s-1 was achieved in solution-processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si3N4) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO2). The solution-processed ZnO thin films grown on Si3N4, prepared by low-pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO2. These results show that the nucleation and growth mechanisms of solution-processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high-κ HfO2/ZnO MOSCAPs were about ten times lower in those fabricated on Si3N4 substrates. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology (NINT-INNT)
Peer reviewedYes
NPARC number21272213
Export citationExport as RIS
Report a correctionReport a correction
Record identifier33dcc3fc-b371-4aa8-aa15-934bd0eb5556
Record created2014-07-23
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)