Optical memory effects in near-surface InAs/GaAs quantum dots having sharp electronic shells

DOIResolve DOI: http://doi.org/10.1109/ISCS.2000.947172
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Proceedings titleCompound Semiconductors, 2000 IEEE International Symposium on
Conference2000 IEEE International Symposium on Compound Semiconductors, 2-5 October 2000, Monterey, California, USA
Pages297302; # of pages: 6
AbstractSelf-assembled quantum dots (QDs) capped with less than ~10 nm display optical memory effects lasting over a time-scale of several minutes. The interaction and charge transfer between zero-dimensional states and surface states are studied using near-surface QD ensembles with well-defined electronic shells. The influence of the temperature and cap thickness have been investigated. The inhomogeneous broadening of self-assembled InAs/GaAs QDs increases from ~30 meV to more than ~46 meV as the distance of the QDs from the surface is changed from 100 nm to 5.0 nm. Simultaneously, a decrease of the radiative recombination intensity by ~3 orders of magnitude, and a red-shift of ~65 meV are observed
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12346788
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Record identifier34028883-4d2e-45ad-8d05-408d04edfec7
Record created2009-09-17
Record modified2016-05-09
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