Growth and characterization of UHV/CVD SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates

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DOIResolve DOI: http://doi.org/10.1116/1.1464840
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TypeArticle
Journal titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume20
Issue3
Pages11201124; # of pages: 5
AbstractHigh-quality SiGe epitaxial layers have been grown on low-defect-density bulk single-crystal SiGe substrates using low-temperature ultrahigh vacuum chemical vapor deposition (UHV/CVD). The layers were simultaneously grown on Si substrates for comparison. Various techniques, including high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), Auger electron spectroscopy, atomic force microscopy (AFM), and cross-sectional transmission electron microscopy (XTEM) were used to characterize the structural quality of the materials. There is good agreement between different techniques for the determination of the composition and thickness of the layers. HRXRD, PL, and XTEM results confirm that the materials deposited are high-quality single-crystal epilayers. The surface root-mean-square roughness measured by AFM is less than 0.4 nm, indicating very smooth surfaces. A thin undoped Si buffer layer was found to improve the structural quality of the layers. The bulk crystal SiGe substrates are useful for the growth of thick lattice-matched and strained SiGe epilayers.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for National Measurement Standards
Peer reviewedNo
NPARC number8899065
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Record identifier34c3f554-b032-43c2-9064-99b19cc1595c
Record created2009-04-22
Record modified2016-05-09
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