Terahertz detection by Field Effect Transistors for security imaging

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DOIResolve DOI: http://doi.org/10.1117/12.883661
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings titleTerahertz Physics, Devices, and Systems V: Advanced Applications in Industry and Defense
Series titleProceedings of SPIE; Volume 8023
ConferenceTerahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, April 25-26, 2011, Orlando, FL, USA
ISSN0277-786X
ISBN9780819485977
Article number802307
SubjectLow costs; Silicon Technologies; Terahertz detection; Terahertz detectors; THz quantum cascade lasers; MESFET devices; Quantum cascade lasers; Detectors
AbstractIn this work we review the most important results concerning the physics and applications of FETs as Terahertz detectors [1]. We present two experiments showing: i) Terahertz detection based on low cost 130 nm silicon technology Field Effect Transistors in the sub-THz range (0.2 THz up to 1.1 THz) and ii) first results on detection by FETs of emission from 3.1 THz Quantum Cascade Lasers. © 2010 SPIE.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271557
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Record identifier351515e8-d592-4f5c-8adb-536eec0d99c6
Record created2014-03-24
Record modified2017-09-13
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