Absolute deformation potentials and robust ab initio model for band shifts induced by (001) biaxial strain in group IIIA-VA semiconductors

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DOIResolve DOI: http://doi.org/10.1063/1.3537815
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TypeArticle
Journal titleApplied Physics Letters
Volume98
Pages023108-1023108-3; # of pages: 3
AbstractA model for the evolution of conduction and valence bands of IIIA-VA (InAs, GaAs, and InP) semiconductors under (001) biaxial strain is developed. The model is based on the ab initio calculations which take into account finite strain dependent relaxation of the reference levels. The results of ab initio full potential calculations of absolute deformation potentials (ADPs) and (001) biaxial strain-modified band edges are reported. It is shown that in type I heterostructures subjected to (001) compressive biaxial strain, the corrections due to nonzero ADP of the core reference levels reduce the strained band offset for holes.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number17131328
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Record identifier36ff6ebe-6cfb-4cad-9bdb-d5ac6308e610
Record created2011-03-26
Record modified2016-05-09
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