Monolithic integration of AlGaN/GaN HFET with MOS on silicon<111>substrates

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DOIResolve DOI: http://doi.org/10.1049/el.2010.3167
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TypeArticle
Journal titleElectronics Letters
Volume46
Issue3
AbstractAlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon <111> substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon <111> substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number17379823
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Record identifier37196b3c-a04d-42fb-b33f-d789a510f798
Record created2011-03-23
Record modified2016-05-09
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