Effect of temperature on the threshold current and wavelength of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) diode lasers

Download
  1. Get@NRC: Effect of temperature on the threshold current and wavelength of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) diode lasers (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1117/12.206342
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings titleProceedings of SPIE--the international society for optical engineering
ConferenceCircular-Grating Light-Emitting Sources, February 6, 1995, San Jose, CA, USA
ISSN0277786X
Volume2398
Pages59; # of pages: 5
AbstractResults will be presented on the variation of threshold current and emission wavelength with temperature of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) lasers, in the range 10 - 90 degree(s)C. The structures were grown by one-step MBE and the circular gratings were defined by electron-beam lithography. Measurements were made pulsed and CW. The characteristic temperature ranged between 18 - 48 K. A wavelength variation with temperature of around 0.1 nm/ degree(s)C was obtained. The results are compared with those of linear, GaAs-based DBR lasers.
PublisherSPIE
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10361236
NPARC number12328604
Export citationExport as RIS
Report a correctionReport a correction
Record identifier3729738e-2819-49d7-a6da-60c8ef7a6c84
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)