Selection of single, mode-locked CO2 laser pulses by semiconductor reflection switching

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DOIResolve DOI: http://doi.org/10.1016/0030-4018(76)90316-3
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TypeArticle
Journal titleOptics Communications
ISSN0030-4018
Volume18
Issue4
Pages543545; # of pages: 3
SubjectLasers, carbon dioxide
AbstractReflection switching of high power, 10 μm radiation by optically induced carriers in a semiconductor has been achieved by irradiating germanium with 3 ns pulses of 1.06 μm radiation. This has permitted the selection of single mode-locked pulses of 10 μm radiation with energies in the 1-2 joule range.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada
Peer reviewedYes
NPARC number21276180
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Record identifier376de6a5-4475-4239-bb67-e73d4058b6ed
Record created2015-09-28
Record modified2016-05-09
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