The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD

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DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2016.04.053
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TypeArticle
Journal titleJournal of Crystal Growth
ISSN0022-0248
Volume445
Pages110114
SubjectDoping; X-ray diffraction; Metalorganic chemical vapour deposition; Semiconducting quaternary alloys
AbstractWe report on the effects of Zn-doping using diethylzinc (DEZn) on the growth of In₁₋xGaxAsyP₁₋y quaternary layers (x=0.18–0.41 and y=0.34–0.76) by metalorganic chemical vapour deposition. Independent of the quaternary layer compositions, a systematic reduction (increase) in Indium (Gallium) was observed. This was accompanied by a reduction in the overall growth rate, and increased tensile strain, with increasing DEZn flow. In contrast, the dependence of arsenic/phosphorus incorporation on DEZn flow was found to depend on the surface stoichiometry. We show quantitatively that the observed tensile strain can be explained by compositional variations caused by the Zn-doping process. These results suggest that DEZn affects both homogeneous and heterogeneous processes during the growth of InGaAsP layers.
Publication date
PublisherElsevier
LanguageEnglish
AffiliationNational Research Council Canada; Information and Communication Technologies
Peer reviewedYes
IdentifierS0022024816301993
NPARC number23000326
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Record identifier37cc6350-bebd-42e5-a197-e67b151d26ec
Record created2016-07-07
Record modified2016-07-07
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