Atom-scale surface reactivity mediated by long-ranged equilibrium charge transfer

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.90.155422
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TypeArticle
Journal titlePhysical Review B - Condensed Matter and Materials Physics
ISSN1098-0121
Volume90
Issue15
Article number155422
Pages155422-1155422-13
AbstractThe observation of reaction outcomes at the bulk scale provides an average view of chemical processes, obscuring potentially significant differences in the behavior of matter at the atom scale. Through a series of atom-resolved scanning tunneling microscopy experiments, the inhomogeneous reactivity of silicon surface dangling bond states is revealed. The differences in reactivity provide evidence for the coexistence of neutral and negative surface states on these surfaces. It is shown that reactivity can be modulated through the density of surface states and by the bulk dopant level. These findings demonstrate that site-specific surface reactivity at the atom scale can be modulated by nonlocal charge allocation and provide opportunities for controlling chemistry at this scale.
Publication date
LanguageEnglish
AffiliationSecurity and Disruptive Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21272629
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Record identifier38537676-9488-44e7-9b36-435e8210056d
Record created2014-12-03
Record modified2016-05-09
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