Effect of growth temperature on photoluminescence from ion-beam-doped molecular beam epitaxial Si:As

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DOIResolve DOI: http://doi.org/10.1016/0040-6090(90)90399-X
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TypeArticle
Journal titleThin solid films
ISSN0040-6090
Volume184
IssueJanuary
Pages6974; # of pages: 6
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards
Peer reviewedNo
Identifier10276968
NRC number1117
NPARC number8897009
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Record identifier38544757-f9ff-4643-92d0-fbe43bcbebb2
Record created2009-04-22
Record modified2016-05-09
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