Electrical Properties of InAlP Native Oxides for GaAs- Based MOS Alications

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EditorSearch for: Pearton, S.; Search for: Ren, D.; Search for: Buckley, D.; Search for: Chu, S.
TypeArticle
ConferenceInternational Symposia:III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-Of-The-Art Program on Compound Semiconductors SOTAPOCS XXXIV, Pennington, N J
Volume2001-1
Pages258264; # of pages: 7
Publication date
PublisherElectrochem Soc
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12346694
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Record identifier38d369ce-4759-4a43-9680-22706ca4cba1
Record created2009-09-17
Record modified2016-05-09
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