Copper nanopattern on SiO₂ from sputter etching a Cu/SiO₂ interface

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DOIResolve DOI: http://doi.org/10.1063/1.1864247
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TypeArticle
Journal titleApplied Physics Letters
Volume86
Issue7
Pages073112-1073112-3; # of pages: 3
SubjectCopper; glass; metal-insulator boundaries; metallic thin films; Monte Carlo methods; nanopatterning; nanostructured materials; self-assembly; sputter deposition; sputter etching; surface morphology
AbstractWe have observed a Cu nanostructure self-assembled on a SiO₂ substrate during ion beam etching the Cu/SiO₂ interface. We have deposited a thin Cu layer on a glass substrate and etched the deposited layer by a neutralized argon ion beam. At the stage when almost all metal is removed by etching, we have observed an ~20-nm-sized Cu pattern on the substrate. By atomistic Monte Carlo simulations we have demonstrated that during sputter etching, a morphology self-organizes on the surface of the Cu layer whose size and shape matches the observed Cu nanostructure. We conclude that the observed Cu nanopattern on the substrate results from the surface morphology developed by sputter instability during etching of the deposited layer.
Publication date
LanguageEnglish
Peer reviewedYes
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NRC number18
NPARC number12329169
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Record identifier39a3a72f-4cf6-403c-99b3-dd675da964fd
Record created2009-09-10
Record modified2016-05-09
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