Composition and growth of thin anodic oxides on InP(100)

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DOIResolve DOI: http://doi.org/10.1016/S0013-4686(02)00138-X
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TypeArticle
Journal titleElectrochimica acta
Volume47
Issue17
Pages27332740; # of pages: 8
AbstractThin anodic oxides (<100 Å) were formed on p-InP (100) in phosphate solution (0.3 M NH4H2PO4) and in sodium tungstate solution (0.1 M Na2WO4·2H2O) at different temperatures (25 and 80 °C) and potentials (1–8 V). Thickness and composition were determined by different surface-analytical techniques including Auger electron spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and transmission electron microscopy. In general, it has been observed that double-layered films are obtained with an outer In-rich layer. The thickness of the outer layer, oxide morphology and roughness as well as the composition of the duplex structure are strongly dependent on the temperature and the composition of the electrolyte. It has been found that oxides formed in phosphate exhibit a higher stability against dissolution compared with oxides formed in tungstate. The latter contain a large amount of In2O3, which leads to poor electrical properties.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744723
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Record identifier39eeedcf-c81d-4cdf-883a-675d265d9028
Record created2009-10-27
Record modified2016-05-09
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