Patchwork Field Emission Properties of Lanthanum Sulfide Thin Films

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EditorSearch for: Wilshaw, P.; Search for: Hug, S.
Proceedings titleTechnical Digest of the 18th International Vacuum Nanoelectronics Conference
Conference18th International Vacuum Nanoelectronics Conference
Pages3334; # of pages: 2
AbstractThe field emission (FE) properties of lanthanum monosulfide (LaS) films, deposited on Si and InP substrates by pulsed laser deposition, have been thoroughly analyzed via the scanning anode field emission microscopy technique (SAFEM, Fig. 1) at different surface locations and at different temperatures. For one location, the full set of measured I-V characteristics (total measured current versus applied voltage) for different values of Z, the distance between the cathode surface and the probe ball, were then analyzed in order to extract the current density J versus actual applied field F (J-F data), within the approximation that the LaS surface is a plane. A characteristic J-F variation is shown in Fig. 2. The work function of the LaS thin film has been extracted from the slope of the plot ln(J/F2) vs 1/F, by using the conventional Fowler-Nordheim relation, leading to a value of ∼0.65 eV which is in agreement with the onset of the electric field needed to observe an emission current density of 1 mA/cm2 at an applied electric field across the vacuum gap around 230 V/μm.
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
IdentifierIEEE Cat 05TH8837
NPARC number12328527
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Record identifier3a2aecb4-5e07-454c-a873-c575b26f1081
Record created2009-09-10
Record modified2016-05-09
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