Rapid thermal annealing of InAs/GaAs quantum dots with a low-temperature-grown InGaP cap layer

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DOIResolve DOI: http://doi.org/10.1116/1.2165655
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TypeArticle
Journal titleJournal of Vacuum Science & Technology A
Volume24
Issue3
Pages700703; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Industrial Research Assistance Program
Peer reviewedNo
NPARC number12744744
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Record identifier3ae1ce2b-f8e1-4e16-bcfa-e57c94d03fa7
Record created2009-10-27
Record modified2016-05-09
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