The effective g-factor in In0.53Ga0.47As/In 0.52Al0.48As quantum well investigated by magnetotransport measurement

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DOIResolve DOI: http://doi.org/10.1063/1.4776236
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TypeArticle
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume113
Issue3
Article number33704
SubjectDephasing; Dephasing rates; Effective band gap; Effective g-factor; High mobility; In-plane magnetic fields; Magneto-transport measurement; Micro-roughness; Shubnikov-de Haas oscillations; Tilt angle; Weak antilocalization; Zeeman splittings; Zero-field spin splitting; Carrier concentration; Gallium; Semiconductor quantum wells
AbstractThe magneotransport properties of a high carrier concentration and high mobility 20-nm thick In0.53Ga0.47As/In 0.52Al0.48As quantum well (QW) are investigated by tilt angle dependent Shubnikov-de Haas oscillations and by weak antilocalization (WAL) in an in-plane magnetic field. The effective g-factor g* and zero field spin splitting Δ 0 are extracted from tilt angle dependent beating pattern. We found that g* shows a dramatic reduction with increasing carrier density due to the increased effective band gap. Furthermore, an anomalously rapid suppression of the WAL effect with increasing in-plane magnetic field B|| is observed. This reveals that the total dephasing rate is not solely contributed by Zeeman splitting. The microroughness scattering in the QW is proposed to be another factor to cause the dephasing and thus responsible for this effect. © 2013 American Institute of Physics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Measurement Science and Standards
Peer reviewedYes
NPARC number21269919
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Record identifier3ae71c45-cca9-4b15-9e77-9edfe3f0cb72
Record created2013-12-13
Record modified2016-05-09
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