Self-organized InAs/InGaAsP quantum dot tube lasers

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DOIResolve DOI: http://doi.org/10.1063/1.4737425
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TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
Volume101
Issue3
Article number031104
AbstractWe report the achievement of a semiconductor tube laser that can operate in the optical communication wavelength range for applications in the emerging Si-photonics. Such nanoscale devices are fabricated from self-organized InAs/InGaAsP quantum dotnanomembranes through a strain-driven self-rolling mechanism using standard photolithography process. Under continuous wave optical pumping, the devices exhibit an ultralow lasing threshold of ∼1.26 μW at 82 K, with multiple emission wavelengths in the S band of optical communications. The spontaneous emission coupling factor and Purcell factor are estimated to be ∼0.30 and ∼4.8, respectively.
Publication date
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21269055
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Record identifier3b30e62d-cc26-4cfc-8b98-6aba71f27053
Record created2013-12-03
Record modified2016-05-09
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