GaN HEMT and MOS monolithic integration on silicon substrates

Download
  1. (PDF, 810 KB)
  2. Get@NRC: GaN HEMT and MOS monolithic integration on silicon substrates (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1002/pssc.201000914
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titlePhysica Status Solidi C
Volume8
Issue7-8
Pages22102212; # of pages: 3
Subjectgallium nitride; MOS; MBE; epitaxy; integration; HFET; HEMT
AbstractA process for monolithically integrating MOS and Al- GaN/GaN HFETs has been developed using a windowed epitaxy technique. AlGaN/GaN HFET devices display a forward current greater than 0.8 A/mm and a breakdown voltage larger than 200 V. Field-plated devices have also been demonstrated. Enclosed MOS devices based on a 900◦C thermal oxide have been produced showing promising characteristics.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number19542537
Export citationExport as RIS
Report a correctionReport a correction
Record identifier3d14a365-b150-4c3e-a1bf-e7cfa0d5a961
Record created2012-02-29
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)