Misfit dislocation injection, interfacial stability and photonic properties of Si-Ge strained layers

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DOIResolve DOI: http://doi.org/10.1007/BF00125882
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TypeArticle
Journal titleJournal of Materials Science : Materials in Electronics
ISSN0957-4522
Volume6
Issue5
Pages280291; # of pages: 12
AbstractLow temperature epitaxy permits the growth of highly strained Si1–xGex/Si multilayers. These exhibit unique optical and electrical properties characteristic of the alloy composition, the tetragonal distortion of the crystal lattice and the periodicity in the growth direction. The kinetics of strain relaxation; misfit dislocation nucleation and propagation for a range of thermal cycles, typical of Si-based device processing, are defined. The early stages of relaxation are characterized using an empirical kinetic model. The interface perfection, interdiffusion and segregation effects in Si1–xGex/Si multilayers are investigated using X-ray scattering techniques. Photoluminescence properties of Si1–xGex quantum wells and alloys, epitaxially deposited on Si are reviewed. Comparison is made between the sharp, near band edge luminescence typical of narrow Si1–xGex quantum wells and the transition to an intense ~ 80 meV broad PL peak obtained from thicker Si1–xGex epitaxial layers. The impact of interfacial roughening during epitaxy on PL character, and the quenching of luminescence due to misfit dislocation injection, are discussed.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for National Measurement Standards
Peer reviewedNo
NPARC number12338546
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Record identifier3d997d96-0a70-43fe-8b60-e5dbb494e798
Record created2009-09-10
Record modified2016-05-09
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