Comparison between ZEP and PMMA resists for nanoscale electron beam lithography experimentally and by numerical modeling

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DOIResolve DOI: http://doi.org/10.1116/1.3640794
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TypeArticle
Journal titleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN1071-1023
Volume29
Issue6
Article number06F306
SubjectElectronic excitation; Experimental comparison; Line Edge Roughness; Main chains; Molecular mechanism; Numerical modeling; Numerical models; Numerical results; Positive-tone; Process condition; Relative performance; Computer simulation; Electron beams; Nanotechnology; Numerical methods; Electron beam lithography
AbstractA modern alternative to the positive-tone PMMA resist is the ZEP 520A (Nippon Zeon) brand co-polymer resist, which offers a higher sensitivity and etch durability for electron beam lithography. However, the molecular mechanisms are not entirely understood, and the relative performance of two resists for various process conditions of nanofabrication is not readily predictable. The authors report a thorough experimental comparison of the performance of PMMA 950k and ZEP 520A resists in MIBK:IPA, ZED, and IPA:water developers. Interestingly, ZEP resist performance was found to depend significantly on the developer. ZED developer increases the sensitivity, whereas IPA:water optimizes line edge roughness and conceivably the resolution at the expense of sensitivity. The authors also describe two alternative numerical models, one assuming an enhancement of the main chain scission in ZEP as a result of electronic excitations in side groups, and another without such enhancement. In the second case, the differences in ZEP and PMMA resists performance are attributed to their different interaction with the developers. Using both approaches, the authors parameterize the respective models of ZEP development by fitting numerical results to the experimental resist morphologies, and analyze the outcomes. © 2011 American Vacuum Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology
Peer reviewedYes
NPARC number21271924
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Record identifier3de6b11f-1631-4fef-aefa-876c8cd9b2ed
Record created2014-05-06
Record modified2016-05-09
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