Interface morphology and relaxation in high temperature grown Si₁₋ₓGeₓ/Si superlattices

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DOIResolve DOI: http://doi.org/10.1016/0022-0248(95)00371-1
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TypeArticle
Journal titleJournal of Crystal Growth
Volume157
Issue1-4
Pages5256; # of pages: 5
AbstractHigh resolution diffraction is used to investigate the interface morphology and strain relaxation in Si₁₋ₓGeₓ/Si superlattices grown at high temperatures. A test structure (ten-period superlattice of 15 nm period length) grown using different deposition rates (0.1-0.4 nm/s), temperatures (420-750?C) and Ge compositions x (0.3-0.46) is examined. Reciprocal space mapping reveals that all these structures, despite their metastability, retain the substrate lattice constant parallel to the surface. However, superlattice features broaden with increasing temperature, growth rate and germanium concentration indicating local variations of the lattice spacing and orientation. Superlattice peaks also exhibit side lobes in reciprocal space, consistent with a lateral undulation of the interfaces. Angle of incidence 113 rocking scans show that the wavelength of the undulation is of the order of 200 nm and tends to increase with growth temperature and decrease with increasing Ge composition or growth rate.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328131
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Record identifier3e8b644f-9bba-4251-8bb7-87e9bf293e6f
Record created2009-09-10
Record modified2016-05-09
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