Effects of surface cleaning and treatments in 2-DEG characteristics of GaN HEMT devices

AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Conference31th Workshop on Integrated circuits and Semiconductors, 2007
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12346516
Export citationExport as RIS
Report a correctionReport a correction
Record identifier3ec17a75-da76-4c58-95cf-faa14c3a453f
Record created2009-09-17
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)