Dark current mechanism and the cause of the current-voltage asymmetry in quantum-well intersubband photodetectors

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DOIResolve DOI: http://doi.org/10.1117/12.162783
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TypeArticle
Proceedings titlePhysical Concepts and Materials for Novel Optoelectronic Device Applications II
Series titleProceedings of SPIE; Volume 1985
ConferencePhysical concepts and materials for novel optoelectronic device applications II : international symposium, 24 May 1993, Trieste, Italy
ISSN0277-786X
ISBN0819412341
Pages500511; # of pages: 12
AbstractRecent research activity in the long wavelength infrared spectral region has been driven by the wide range of possible applications for optoelectronic systems and by the wealth of new physical phenomena displayed by quantum well intersubband-based devices. GaAs-AlGaAs quantum well intersubband photodetectors are currently under intense research investigation, and promise to have a wide range of application. Here we first present a microscopic model of the detector dark current, which provides new physical insights into the mechanism of carrier transport in multiple quantum well structures. Systematic experiments have been carried out to compare with the model, and good agreement between theory and experiments is obtained. The model is based on considering the details of the carrier trapping and emission from quantum wells.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NRC number764
NPARC number5763231
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Record identifier3f47e156-f84e-4e6d-95ae-34884da33036
Record created2009-03-29
Record modified2016-05-09
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