Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronics

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DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2008.10.105
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TypeArticle
Journal titleJourmal of Crystal Growth
Volume311
Issue7
Pages20872090; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12441146
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Record identifier3fd383c6-8392-4040-9a15-9350c4bf4e2f
Record created2009-09-25
Record modified2016-05-09
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