Memory in nonlinear ionization of transparent dielectrics

DOIResolve DOI: http://doi.org/10.1109/QELS.2007.4431795
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings titleConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
Conference2007 Quantum Electronics and Laser Science Conference, QELS, 6 May 2007 through 11 May 2007, Baltimore, MD
ISBN1557528349
9781557528346
Article number4431795
SubjectQuantum electronics; Ionization thresholds; Laser science; Non-linear phenomenon; Transparent solids; Electron optics
AbstractWe show a reduction in the ionization threshold at previously ionized regions inside transparent solids. This forms a shot-to-shot memory that can lead to several unique nonlinear phenomena including the formation of nanostructures. ©2007 Optical Society of America.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada
Peer reviewedYes
NPARC number21276240
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Record identifier3feae5aa-d54f-45d7-89e5-00dfda42eb1f
Record created2015-09-28
Record modified2016-05-09
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