Silicon atomic plane doping in MBE grown InAs/GaAs

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DOIResolve DOI: http://doi.org/10.1016/0038-1098(91)90363-Z
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TypeArticle
Journal titleSolid State Communications
ISSN0038-1098
Volume78
Issue6
Pages493497; # of pages: 5
SubjectCrystals--Epitaxial Growth; Electrons--Transport Properties; Magnetic Fields--Applications; Molecular Beam Epitaxy--Applications; Semiconducting Gallium Arsenide--Growth; Heteroepitaxial Semiconducting Compounds; Magnetotransport Measurements; Silicon Atomic Plane Doping; Suspended Growth Doping Technique; Semiconducting Indium Compounds
AbstractWe examine the electronic transport properties of a sheet of silicon donors introduced during the molecular beam epitaxial growth of InAs/GaAs, using the suspended growth doping technique. Layers are characterised by magnetotransport measurements in magnetic fields applied parallel and perpendicular to the sample surface. © 1991.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number21274626
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Record identifier4052bcaa-3d17-40c7-a7b7-2eafc28f9994
Record created2015-03-18
Record modified2016-05-09
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