Quantification of strain through linear dichroism in the Si 1s edge X-ray absorption spectra of strained Si1-xGex thin films

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  1. Get@NRC: Quantification of strain through linear dichroism in the Si 1s edge X-ray absorption spectra of strained Si1-xGex thin films (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1016/j.apsusc.2012.11.012
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TypeArticle
Journal titleApplied Surface Science
ISSN0169-4332
Volume265
Pages358362; # of pages: 5
SubjectAngle dependence; Angle-dependent; Compressive strain; High spatial resolution; Linear dichroism; NEXAFS; Si(1 0 0); Silicon-germanium alloys; Strain metrology; Strain-dependent; Strained-Si; Total electron yield; X-ray absorption spectrum; X-ray spectromicroscopy; Absorption spectra; Dichroism; Epitaxial growth; Germanium; Germanium alloys; Raman spectroscopy; Strain; Thin films; X ray absorption spectroscopy; Silicon
AbstractWe have quantitatively measured the angle dependence in the Silicon 1s X-ray absorption spectra of strained Si1-xGex thin films prepared by epitaxial growth on Si(1 0 0) substrates, through surface sensitive total electron yield detection. The linear dichroism difference extracted from these angle dependent X-ray absorption spectra is proportional to the degree of strain, as measured separately by Raman spectroscopy. This quantitative relationship provides a means to measure the compressive strain in Si 1-xGex thin films. This strain-dependent X-ray absorption spectroscopy has the potential to realize a semiconductor strain metrology through high spatial resolution X-ray spectromicroscopy.
Publication date
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21270370
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Record identifier406092d1-80c0-4a84-85c5-19e1f747326e
Record created2014-02-05
Record modified2016-05-09
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