Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots

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DOIResolve DOI: http://doi.org/10.1063/1.112060
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TypeArticle
Journal titleApplied Physics Letters
Volume65
Issue11
Pages13881390; # of pages: 3
SubjectENERGY LEVELS; ENERGYLEVEL DENSITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; NANOSTRUCTURES; PHOTOLUMINESCENCE; QUANTUM DOTS; SIZE EFFECT
AbstractThe energy levels of nanometer size InGaAs quantum dots epitaxially grown on GaAs by the coherent islanding effect are probed using selectively excited photoluminescence (PL), and PL excitation. A lateral-confinement-induced interlevel spacing of ~30 meV between the first two states can be deduced from the spectra.
Publication date
LanguageEnglish
Peer reviewedNo
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This is a non-NRC publication

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NPARC number12327613
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Record identifier40910852-4f63-4335-a834-6c96fcd7a385
Record created2009-09-10
Record modified2016-05-09
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