HfLaON n-MOSFETs Using a Low Work Function HfSix Gate

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DOIResolve DOI: http://doi.org/10.1109/LED.2007.909843
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TypeArticle
Journal titleIEEE Electron Device Letters
Volume28
Issue12
Pages1092
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744660
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Record identifier418786f6-9415-48ad-9e20-770f54bd00bd
Record created2009-10-27
Record modified2016-05-09
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