The effect of surface cleaning on current collapse in AlGaN/GaN HEMTs

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Proceedings titleState-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7
Series titleECS Transactions; Volume 3
Conference210th ECS Meeting, 29 October-3 November 2006, Cancun, Mexico
Pages373379; # of pages: 7
AbstractThe phenomenon of current collapse is a limiting factor in the performance of AlGaN/GaN high electron mobility transistors (HEMTs), and can be ameliorated by the deposition of a silicon nitride passivation film on the surface. The effect of three types of surface cleaning prior to the application of a silicon nitride passivation layer are studied. The best results were obtained when the wafers were cleaned using an air plasma descum followed by an HCl dip prior to the deposition of the silicon nitride passivation. Auger electron spectroscopy depth profiling indicated that the degree of collapse was correlated with the amount of residual carbon contamination at the silicon nitride/AlGaN interface.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12346762
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Record identifier4236f1b5-c953-4b12-8a8b-93336e5d1f3b
Record created2009-09-17
Record modified2016-05-09
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