The Influence of the long lived quantum Hall potential on the characteristics of quantum devices

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.73.075309
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TypeArticle
Journal titlePhysical review. B, Condensed matter and materials physics
Volume73
Issue7
Pages075309075313; # of pages: 5
AbstractHysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same two-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the transport properties of all lateral devices, subjected to quantizing magnetic fields.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744559
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Record identifier43592529-dca1-4e7f-8475-fa55579cd4ee
Record created2009-10-27
Record modified2016-05-09
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