Scaling of a metal/insulator transition in a 2D system at B=0

DOIResolve DOI: http://doi.org/10.1016/0039-6028(96)00571-7
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TypeArticle
Proceedings titleProceedings of the Eleventh International Conference on the Electronic Properties of Two-Dimensional Systems
Series titleSurface Science; Volume 361-362
Conference11th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS XI), Nottingham, UK, August 7-11, 1995
Pages949952; # of pages: 4
SubjectElectrical transport; Metal-oxide-semiconductor (MOS) structures; Silicon
AbstractThe resistivity of a two-dimensional electron system in silicon at low electron densities was empirically found to scale with a single parameter, T0, which approaches zero at some critical electron density, nc, and increases as a power T0 ∞ ns − ncv with v = 1.6 ± 0.1 both in metallic (ns > nc) and insulating (ns < nc) regions. This behavior suggests a true metal/insulator transition in the two-dimensional electron system in silicon at B = 0, in contrast with the well-known scaling theory.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12337989
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Record identifier43938f37-304f-4bd8-b11c-5075454f39cf
Record created2009-09-10
Record modified2016-05-09
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