1.53µm GaInNAsSb laser diodes grown on GaAs(100)

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DOIResolve DOI: http://doi.org/10.1049/el:20057623
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TypeArticle
Journal titleElectronics Letters
ISSN0013-5194
Volume41
Issue2
Pages7172; # of pages: 2
AbstractGaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm−2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744533
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Record identifier44223772-9813-484f-8bf8-e7c7c0b53b62
Record created2009-10-27
Record modified2016-05-09
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