Molecular beam epitaxially deposited amorphous silicon

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DOIResolve DOI: http://doi.org/10.1557/PROC-609-A5.1
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings titleAmorphous and heterogeneous silicon thin films 2000, symposium held April 24-28, 2000, San Francisco, California, USA.
Series titleMaterials Research Society symposia proceedings
Conference2000 MRS Spring Meeting: Symposium A: Amorphous and Heterogeneous Silicon Thin Films, 24-28 April 2000, San Francisco, California, USA.
ISSN0272-9172
ISBN155899517X
9781558995178
Article numberA5.1
Pages# of pages: 6
AbstractWe have deposited a novel form of amorphous silicon through molecular beam epitaxy in an ultra-high vacuum. In particular, by depositing silicon atoms onto an optical quality fused quartz substrate at room temperature we have obtained a silicon-based material that lacks the periodicity that characterizes crystalline silicon but nevertheless has 98% of the density. Spectroscopic studies reveal that there are only trace amounts of hydrogen and other impurity atoms in this novel form of amorphous silicon, this contrasting dramatically with the case of conventional amorphous silicon. The Raman and optical spectroscopic properties of this form of amorphous silicon are contrasted with those of conventional amorphous silicon and sputtered amorphous silicon, and conclusions, regarding the amount of disorder, are drawn. Finally, the device implications of this novel form of amorphous silicon are discussed.
Publication date
PublisherCambridge University Press
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for National Measurement Standards
Peer reviewedNo
NRC number957
NPARC number8897417
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Record identifier44288dac-520f-41d6-809e-3d92720c137e
Record created2009-04-22
Record modified2016-05-09
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