InAlGaN laser diodes grown by plasma assisted molecular beam epitaxy [Inalgan lazeriniai diodai, auginami plazma papildomo molekulinio spindulio epitaksijos būdu]

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DOIResolve DOI: http://doi.org/10.3952/lithjphys.51402
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleLithuanian Journal of Physics
ISSN1648-8504
Volume51
Issue4
Pages276282; # of pages: 7
AbstractWe present recent progress in the growth of nitride-based laser diodes (LDs) made by plasma assisted molecular beam epitaxy (PAMBE). This technology is ammonia-free, and nitrogen for the growth is activated by RF plasma source from nitrogen molecules. The demonstration of continuous wave blue-violet InGaN LDs has opened a new perspective for PAMBE in optoelectronics. We demonstrate the laser diodes grown by PAMBE operating at the range from 410 nm to 455 nm. The key factors which allow us to extend the lasing wavelength to 455 nm are (a) improvements in the growth of InGaN quantum wells with high nitrogen flux in PAMBE, and (b) design of the laser diode structure. We also report on optically pumped lasing at 501 nm on InGaN laser structures which show that there are no intrinsic limitations in PAMBE technology for the growth of green LDs. © lietuvos mokslu{ogonek} akademija, 2011.
Publication date
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271515
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Record identifier4432bc88-4e74-451c-8655-6762908da778
Record created2014-03-24
Record modified2016-05-09
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