Strain engineering and luminescence in Si/SiGe three dimensional nanostructures

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DOIResolve DOI: http://doi.org/10.1557/opl.2011.300
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TypeArticle
Proceedings title2010 MRS Fall Meeting - Symposium AA – Group IV Semiconductor Nanostructures and Applications
Series titleMaterials Research Society Symposium Proceedings; no. 1305
Conference2010 MRS Fall Meeting, 29 November 2010 through 3 December 2010, Boston, MA
ISSN0272-9172
ISBN9781618395122
Pages6469; # of pages: 6
SubjectAnalytical electron microscopy; Excitation wavelength; Interface recombination; Low temperature photoluminescence; PL lifetime; PL quantum efficiency; PL spectra; Si/SiGe; Strain engineering; Strained Silicon; Three-dimensional nanostructures; Time-resolved PL measurement; Ultrahigh resolution; Electron microscopy; Germanium; Semiconductor quantum wells; Nanostructures
AbstractStrain engineering in composition-controlled Si-Si/Ge nanocluster multilayers with high germanium content (∼ 50%) is achieved by varying thicknesses of Si/SiGe layers and studied by low temperature photoluminescence (PL) measurements. The PL spectra show reduction in strained silicon energy bandgap and a splitting presumably associated with partial removal of heavy hole-light hole degeneracy in SiGe valence band. Time-resolved PL measurements performed under different excitation wavelengths show dramatically different PL lifetimes, ranging from ∼ 2 μs to 10 ns and an unusually high PL quantum efficiency. The results are explained by using the Si/SiGe interface recombination model, which is supported by ultra-high resolution transmission and analytical electron microscopy measurements. © 2011 Materials Research Society.
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LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Measurement Science and Standards; Information and Communication Technologies
Peer reviewedYes
NPARC number21271549
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Record identifier446f7bb7-f43f-435c-afd7-da28d680e547
Record created2014-03-24
Record modified2016-05-09
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